? semiconductor components industries, llc, 2007 february, 2007 ? rev. 7 1 publication order number: MBR1035/d MBR1035, mbr1045 switchmode ? power rectifiers features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 10 a total ? pb?free packages are available* applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94, v?0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperatures for soldering purposes: 260 c max. for 10 seconds ? esd rating: human body model 3b machine model c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information MBR1035 to?220 to?220ac case 221b plastic 50 units/rail 3 4 1 schottky barrier rectifiers 10 amperes 35 to 45 volts mbr1045 to?220 50 units/rail 3 1, 4 marking diagram http://onsemi.com MBR1035g to?220 (pb?free) 50 units/rail mbr1045g to?220 (pb?free) 50 units/rail a = assembly location y = year ww = work week g = pb?free package b10x5 = device code x = 3 or 4 ka = diode polarity ay wwg b10x5 ka
MBR1035, mbr1045 http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage MBR1035 mbr1045 v rrm v rwm v r 35 45 v average rectified forward current (t c = 135 c, per device) i f(av) 10 a peak repetitive forward current, (square wave, 20 khz, t c = 135 c) i frm 10 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a peak repetitive reverse surge current (2.0 s, 1.0 khz) i rrm 1.0 a storage temperature range t stg ?65 to +175 c operating junction temperature (note 1) t j ?65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic conditions symbol max unit maximum thermal resistance, junction?to?case min. pad r jc 2.0 c/w maximum thermal resistance, junction?to?ambient min. pad r ja 60 electrical characteristics characteristic symbol min typical max unit instantaneous forward voltage (note 2) (i f = 10 amps, t j = 125 c) (i f = 20 amps, tj = 125 c) (i f = 20 amps, tj = 25 c) v f ? ? ? 0.55 0.67 0.78 0.57 0.72 0.84 v instantaneous reverse current (note 2) (rated dc voltage, tj = 125 c) (rated dc voltage, tj = 25 c) i r ? ? 5.3 0.008 15 0.1 ma 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
MBR1035, mbr1045 http://onsemi.com 3 figure 1. maximum forward voltage 1.2 v f , instantaneous voltage (volts) 100 70 5.0 10 3.0 i f , instantaneous forward current (amps) 1.0 0.6 0.2 0.4 0.8 1.0 1.4 2.0 20 0.1 0.5 0.7 30 7.0 0.3 50 t j = 150 c figure 2. typical forward voltage 0.2 1.2 v f , instantaneous voltage (volts) 100 70 5.0 10 3.0 i f , instantaneous forward current (amps) 1.0 0.6 0.2 0.4 0.8 1.0 1.4 2.0 20 0.1 0.5 0.7 30 7.0 0.3 50 t j = 150 c 0.2 100 c 25 c 100 c 25 c
MBR1035, mbr1045 http://onsemi.com 4 5.0 15 0 v r , reverse voltage (volts) 10 1.0 0.1 0.01 0.001 number of cycles at 60 hz 10 1.0 200 100 50 30 20 3.0 10 , reverse current (ma) i r 20 30 25 100 2.0 100 70 i fsm , peak half?wave current (amps) 35 40 50 45 figure 3. maximum reverse current figure 4. maximum surge capability 7.0 5.0 30 20 70 50 t j = 150 c 125 c 100 c 75 c 25 c (capacitiveload) i pk i av 5 110 t c , case temperature ( c) 15 10 5.0 0 t a , ambient temperature ( c) 80 0 16 8.0 4.0 2.0 0 40 120 , average forward current (amps) i f(av) 130 140 20 20 160 6.0 150 160 figure 5. current derating, infinite heatsink figure 6. current derating, r ja = 16 c/w 60 120 100 140 2.0 0 i f(av) , average forward current (amps) 8.0 5.0 4.0 2.0 0 t a , ambient temperature ( c) 80 0 5.0 4.0 2.0 1.0 0 40 4.0 , average forward power dissipation (watts) p f(av) 6.0 10 8.0 10 20 160 3.0 i f(av) , average forward current (amps) 12 16 14 figure 7. forward power dissipation figure 8. current derating, free air 60 120 100 140 , average forward current (amps) i f(av) 14 10 12 3.0 1.0 9.0 7.0 6.0 dc t j = 150 c sine wave resistive load square wave (capacitiveload) i pk i av 5 20 10 rated voltage applied dc square wave 20 10 i pk i av (resistiveload) (capacitiveload) i pk i av 20, 10, 5 rated voltage applied dc square wave i pk i av (resistiveload) dc square wave i pk i av (resistiveload) (capacitiveload) i pk i av 20, 10, 5 rated voltage applied r ja = 60 c/w
MBR1035, mbr1045 http://onsemi.com 5 r(t), transient thermal resistance (normalized) 0.01 0.1 1.0 10 100 0.05 0.03 0.02 0.01 0.1 t, time (ms) 0.5 0.3 0.2 1.0 p pk p pk t p t 1 time duty cycle, d = t p /t 1 peak power, p pk , is peak of an equivalent square power pulse. t jl = p pk ? r jl [d + (1 ? d) ? r(t 1 + t p ) + r(t p ) ? r(t 1 )] where: t jl = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p . 1000 figure 9. thermal response 0.07 0.7 v r , reverse voltage (volts) 0.5 1500 1000 500 300 150 0.1 0.05 50 700 c, capacitance (pf) figure 10. capacitance 0.2 2.0 1.0 5.0 200 maximum typical 10 20
MBR1035, mbr1045 http://onsemi.com 6 package dimensions to?220 plastic case 221b?04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f style 1: pin 1. cathode 2. n/a 3. anode 4. cathode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 MBR1035/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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